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Other articles related with "static random access memory"：
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96103 |
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展) |
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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin |
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Chin. Phys. B
2017 Vol.26 (9): 96103-096103
[Abstract]
(665)
[HTML 0 KB]
[PDF 432 KB]
(303)
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96109 |
Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明) |
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Pattern dependence in synergistic effects of total dose onsingle-event upset hardness |
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Chin. Phys. B
2016 Vol.25 (9): 96109-096109
[Abstract]
(721)
[HTML 1 KB]
[PDF 325 KB]
(233)
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106106 |
Zheng Qi-Wen (郑齐文), Cui Jiang-Wei (崔江维), Zhou Hang (周航), Yu De-Zhao (余德昭), Yu Xue-Feng (余学峰), Lu Wu (陆妩), Guo Qi (郭旗), Ren Di-Yuan (任迪远) |
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Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation |
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Chin. Phys. B
2015 Vol.24 (10): 106106-106106
[Abstract]
(703)
[HTML 1 KB]
[PDF 314 KB]
(396)
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118503 |
Xiao Yao (肖尧), Guo Hong-Xia (郭红霞), Zhang Feng-Qi (张凤祁), Zhao Wen (赵雯), Wang Yan-Ping (王燕萍), Zhang Ke-Ying (张科营), Ding Li-Li (丁李利), Fan Xue (范雪), Luo Yin-Hong (罗尹虹), Wang Yuan-Ming (王园明) |
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Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 118503-118503
[Abstract]
(617)
[HTML 1 KB]
[PDF 252 KB]
(377)
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106102 |
Zheng Qi-Wen (郑齐文), Yu Xue-Feng (余学峰), Cui Jiang-Wei (崔江维), Guo Qi (郭旗), Ren Di-Yuan (任迪远), Cong Zhong-Chao (丛忠超), Zhou Hang (周航) |
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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation |
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Chin. Phys. B
2014 Vol.23 (10): 106102-106102
[Abstract]
(580)
[HTML 1 KB]
[PDF 473 KB]
(427)
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29401 |
Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰) |
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Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells |
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Chin. Phys. B
2012 Vol.21 (2): 29401-029401
[Abstract]
(1112)
[HTML 1 KB]
[PDF 1424 KB]
(1008)
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68501 |
Zhang Ke-Ying (张科营), Guo Hong-Xia (郭红霞), Luo Yin-Hong (罗尹虹), Fan Ru-Yu (范如玉), Chen Wei (陈伟), Lin Dong-Sheng (林东生), Guo Gang (郭刚), Yan Yi-Hua (闫逸华) |
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First principles simulation technique for characterizing single event effects |
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Chin. Phys. B
2011 Vol.20 (6): 68501-068501
[Abstract]
(1291)
[HTML 1 KB]
[PDF 3188 KB]
(1697)
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